Piezocon Application - MoCVD

This example shows how, by using the Piezocon^® gas concentration sensor, precise control of the delivery of the process gas (TMIn) to the MOCVD chamber is achieved even when its concentration in the TMIn/H₂ gas mixture is affected by a change in temperature. The use of the Piezocon^® sensor assures a repeatable and reproducible epitaxy growth process as measured by the InGaAlP material lattice mismatch.

	InGaAlP DH Structure Grown Using TMIn Flow in Closed Loop Control with Lorex Piezocon Concentration Data

Emcore uses Lorex Piezocon gas concentration sensor as a key component in their advanced MOCVD systems in EMCORE's feedback control loop. The process gas is TMIn, the carrier gas is H₂. The InGaAlP growth rate at different temperatures (24 and 25^oC) are given in the graph below: